tm january 2007 FDFS6N548 integrated n- channel powertrench ? mosfet and schottky diode ?2007 fairchild semiconductor corporation FDFS6N548 rev.b www.fairchildsemi.com 1 FDFS6N548 integrated n-channel powertrench ? mosfet and schottky diode 30v, 7a, 23m ? features ? max r ds(on) = 23m ? at v gs = 10v, i d = 7a ? max r ds(on) = 30m ? at v gs = 4.5v, i d = 6a ? v f < 0.45v @ 2a v f < 0.28 v @ 100ma ? schottky and mosfet incorporated into single power surface mount so-8 package ? electrically independent sc hottky and mosfet pinout for design flexibility ? low miller charge general description the FDFS6N548 combines the exceptional performance of fairchild's powertrench mosfet technology with a very low forward voltage drop schottky barrier rectifier in an so-8 package. this device is designed specifically as a single package solution for dc to dc converters. it features a fast switching, low gate charge mosfet with very low on-state resistance. the independently connected schottky di ode allows its use in a variety of dc/dc converter topologies. application ? dc/dc conversion mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 30 v v gs gate to source voltage 20 v i d drain current -continuous (note 1a) 7 a -pulsed 30 p d power dissipation for dual operation 2 w power dissipation for single operation (note 1a) 1.6 e as drain-source avalanche energy (note 3) 12 mj v rrm schotty repetitive peak reverse voltage 20 v i o schotty average forward current (note 1a) 2 a t j , t stg operating and storage junction temperature range -55 to +150 c r ja thermal resistance, junction to ambient (note 1a) 78 c/w r jc thermal resistance, junction to case (note 1) 40 device marking device package reel size tape width quantity FDFS6N548 FDFS6N548 so-8 330mm 12mm 2500 units a a s g c c d d pin 1 so-8 8 1 7 2 6 3 5 4 a a s g c c d d
FDFS6N548 integrated n- channel powertrench ? mosfet and schottky diode FDFS6N548 rev.b www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = 250 p a, v gs = 0v 30 v ' bv dss ' t j breakdown voltage temperature coefficient i d = 250 p a, referenced to 25 c 22 mv/ c i dss zero gate voltage drain current v ds = 24v, 1 p a v gs = 0v t j = 125 c 250 i gss gate to source leakage current v gs = 20v, v ds = 0v 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 p a 1.2 1.8 2.5 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = 250 p a, referenced to 25 c -5 mv/ c r ds(on) drain to source on-resistance v gs = 10v, i d = 7a 19 23 m : v gs = 4.5v, i d = 6a 23 30 v gs = 10v, i d = 7a, t j = 125 c 26 31 g fs forward transconductance v ds = 5v, i d = 7a 20 s dynamic characteristics c iss input capacitance v ds = 15v, v gs = 0v, f = 1mhz 525 700 pf c oss output capacitance 100 133 pf c rss reverse transfer capacitance 65 100 pf r g gate resistance f = 1mhz 0.8 : switching characteristics t d(on) turn-on delay time v dd = 15v, i d = 7a, v gs = 10v, r gen = 6 : 6 12 ns t r rise time 2 10 ns t d(off) turn-off delay time 14 25 ns t f fall time 2 10 ns q g(tot) total gate charge at 10v v ds = 15v, i d = 7a v gs = 10v 9 13 nc q gs gate to source gate charge 1.5 nc q gd gate to drain ?miller? charge 2 nc drain-source diod e characteristics v sd source to drain diode forward voltage v gs = 0v, i s = 7a (note2) 0.90 1.25 v t rr reverse recovery time i f = 7a, di/dt = 100a/ p s 23 35 ns q rr reverse recovery charge 14 21 nc schottky diode characteristics v r reverse breakdown voltage i r = -1ma -30 v i r reverse leakage v r = -10v t j = 25 c -39 -250 p a t j = 125 c -18 ma v f forward voltage i f = 100ma t j = 25 c 225 280 mv t j = 125 c 140 i f = 2a t j = 25 c 364 450 t j = 125 c 290
FDFS6N548 integrated n- channel powertrench ? mosfet and schottky diode FDFS6N548 rev.b www.fairchildsemi.com 3 notes: 1: r ja is the sum of the junction-to-case and case-to-ambient thermal re sistance where the case thermal reference is defined as the s older mounting surface of the drain pins . r jc is guaranteed by design while r ca is determined by the user?s board design. 2: pulse test: pulse width < 30 0 s, duty cycle < 2.0%. 3: starting t j = 25c, l = 1mh, i as = 5.0a, v dd = 27v, v gs = 10v. c) 135 c/w when mounted on a minimun pad a) 78 c/w when mounted on a 0.5in 2 pad of 2 oz copper b) 125 c/w when mounted on a 0.02 in 2 pad of 2 oz copper
FDFS6N548 integrated n- channel powertrench ? mosfet and schottky diode FDFS6N548 rev.b www.fairchildsemi.com 4 typical characteristics t j = 25c unless otherwise noted figure 1. 01234 0 5 10 15 20 25 30 v gs = 3.5v v gs = 4.5v v gs = 3v v gs = 4v v gs = 10v pulse duration = 80 p s duty cycle = 0.5%max i d , drain current (a) v ds , drain to source voltage (v) on region characteristics figure 2. 0 5 10 15 20 25 30 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 3v v gs = 10v v gs = 4v v gs = 4.5v v gs = 3.5v pulse duration = 80 p s duty cycle = 0.5%max normalized drain to source on-resistance i d , drain current(a) n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 i d = 7a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 246810 10 20 30 40 50 60 pulse duration = 80 p s duty cycle = 0.5%max t j = 150 o c t j = 25 o c i d = 7a r ds(on) , drain to source on-resistance ( m : ) v gs , gate to source voltage (v) o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 01234 0 5 10 15 20 25 30 pulse duration = 80 p s duty cycle = 0.5%max t j = -55 o c t j = 25 o c t j = 150 o c i d , drain current (a) v gs , gate to source voltage (v) vdd = 5v figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0v i s , reverse drain current (a) v sd , body diode forward voltage (v) 60 s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDFS6N548 integrated n- channel powertrench ? mosfet and schottky diode FDFS6N548 rev.b www.fairchildsemi.com 5 figure 7. 0246810 0 2 4 6 8 10 v dd = 20v v dd = 15v v gs , gate to source voltage(v) q g , gate charge(nc) v dd = 10v i d = 7a gate charge characteristics figure 8. 0.1 1 10 100 1000 f = 1mhz v gs = 0v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss 30 40 c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 1 2 3 4 5 6 7 8 t j = 25 o c t j = 125 o c t av , time in avalanche(ms) i as , avalanche current(a) 20 u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 2 4 6 8 r t ja = 78 o c/w v gs = 4.5v v gs = 10v i d , drain current (a) t a , ambient temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs ambient temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e operating area 0.1 1 10 0.01 0.1 1 10 1s dc 10s 100ms 10ms 1ms 100us operation in this area may be limited by r ds(on) single pulse t j = max rated t a = 25 o c i d , drain current (a) v ds , drain to source voltage (v) 50 80 figure 12. 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 100 v gs = 10v single pulse p (pk) , peak transient power (w) t, pulse width (s) 300 0.5 t a = 25 o c i = i 25 for temperatures above 25 o c derate peak current as follows: 150 t a ? 125 ---------------------- - s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25c unless otherwise noted
FDFS6N548 integrated n- channel powertrench ? mosfet and schottky diode FDFS6N548 rev.b www.fairchildsemi.com 6 figure 13. 0.0 0.4 0.8 1.2 1.6 2.0 0.001 0.01 0.1 1 10 t j = 125 o c t j = 25 o c i f , forward leakage current (a) v f , forward voltage (v) 30 schottky diode forward characteristics figure 14. 0 5 10 15 20 0.001 0.01 0.1 1 10 t j = 125 o c t j = 25 o c v r , reverse voltage (v) i r , reverse leakage current (ma) schottky diode reverse characteristics figure 15. transient thermal response curve 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.01 0.1 1 duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 2 3e-3 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25c unless otherwise noted
FDFS6N548 rev. b www.fairchildsemi.com 7 FDFS6N548 integrated n- channel powertrench ? mosfet and schottky diode trademarks the following are registered and unregistere d trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make c hanges without further notice to any products herein to improve reliability, function or design. fairchild does not as sume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fair child semiconductor corporation. as used herein: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perfor m when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in signif icant injury to the user. 2. a critical component is any comp onent of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life suppo rt device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact ? fast ? fastr? fps? frfet? fact quiet series? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect ? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx ? msxpro ? ocx ? ocxpro ? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure ? rapidconnect ? serdes ? scalarpump ? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinyboost? tinybuck? tinypwm? tinypower? tinylogic ? tinyopto? trutranslation? uhc ? unifet? vcx? wire? across the board. around the world. ? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first productio n this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this data sheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. i22
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